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US 9,070,619 B2Granted
Nitride semiconductor wafer for a high-electron-mobility transistor and its use
AssigneeHitachi Metals, Ltd.
InventorTadayoshi Tsuchiya
Life of this patent
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Abstract
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0≦x≦0.05) and AlyGa1-yN (0<y≦1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor.
Claims20
A high-electron-mobility transistor nitride semiconductor wafer, comprising:
- a substrate;
- a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦x≦0.05) layer and an AlyGa1-yN (0<y≦1 and x<y) layer;
- a nitride semiconductor channel layer formed on the buffer layer;
- and
- a nitride semiconductor barrier layer formed on the channel layer,
- wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor.
3 more elements
A nitride semiconductor wafer for using in a high-electron-mobility transistor, the nitride semiconductor wafer comprising:
- a substrate;
- a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦x≦0.05) layer and an AlyGa1-yN (0<y≦1 and x<y) layer;
- a nitride semiconductor channel layer formed on the buffer layer;
- and
- a nitride semiconductor barrier layer formed on the channel layer,
- wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor.
3 more elements
Dependencies are inferred from the claim text.