Light emitting device

A light emitting device comprising:

• a light emitting structure comprising a first section and a second section, wherein the first section comprises a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers, wherein the second section comprises a third semiconductor layer disposed on the first section and doped with the first dopant, the third semiconductor layer having an exposed region, a fourth semiconductor layer disposed on the third semiconductor layer except for the exposed region and doped with the second dopant, and a second active layer between the third and fourth semiconductor layers, and wherein a first trench is formed from the fourth semiconductor layer to the first semiconductor layer;
• a first electrode inserted into the first trench so as to be disposed on an exposed portion of the first semiconductor layer within the first trench;
• a second electrode electrically connected to the fourth semiconductor layer and the first electrode;
• and
• a third electrode inserted into a hole penetrating the exposed region of the third semiconductor vertically so as to be disposed on the exposed region and the second semiconductor layer, the third electrode electrically connected to the second and third semiconductor layers,
• wherein the second semiconductor layer and the third semiconductor layer are directly contacted with each other.

A light emitting device comprising:

• a conductive support member comprising a first support portion and a second support portion spaced from the first support portion;
• a light emitting structure comprising a first section and a second section, wherein the first section comprises a first semiconductor layer disposed on the first and second support portions and doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers, wherein the second section comprises a third semiconductor layer disposed on the first section and doped with the first dopant, a fourth semiconductor layer disposed on the third semiconductor layer and doped with the second dopant, and a second active layer between the third and fourth semiconductor layers, wherein a second trench is formed on the first support portion to extend from the first semiconductor layer to the fourth semiconductor layer, and wherein a third trench is formed on the second support portion to extend from the first semiconductor layer to the third semiconductor layer;
• a first electrode disposed between the first support portion and the first semiconductor layer, and the first electrode electrically connected to the first support portion and the first semiconductor layer;
• a second electrode disposed in the second trench, and electrically connected to the fourth semiconductor layer and the first electrode;
• and
• a third electrode disposed to come into contact with exposed portions of the second and third semiconductor layers within the third trench, the third electrode electrically connected to the second and third semiconductor layers,
• wherein the third electrode inserted into a hole penetrating the exposed region of the third semiconductor vertically so as to be disposed on the exposed region and the second semiconductor layer, the third electrode electrically connected to the second and third semiconductor layers,
• wherein the second semiconductor layer and the third semiconductor layer are directly contacted with each other.