Method of manufacturing semiconductor device
AssigneeAdvantest Corporation
InventorsMasahiro Ishida, Daisuke Watanabe, Masayuki Kawanabe
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device using an electron beam lithography apparatus configured to emit an electron beam to perform lithography of a pattern, processing including pattern formation with the electron beam lithography apparatus is performed on a wafer, and an electric characteristic of the thus manufactured semiconductor devices is measured by a semiconductor testing apparatus. Then, electron beam lithography data to be used by the electron beam lithography apparatus is adjusted based on a result of measurement of the electric characteristic so as to reduce a variation in the electric characteristic of the semiconductor device within a surface of the wafer.
Claims6
A method of manufacturing a semiconductor device using an electron beam lithography apparatus configured to emit an electron beam to perform lithography of a pattern, the method comprising:
- a wafer processing step of forming a semiconductor device by performing processing inclusive of pattern formation on a wafer using the electron beam lithography apparatus;
- a wafer cutting step of cutting the wafer provided with semiconductor devices into semiconductor chips;
- a semiconductor testing step of measuring an electric characteristic of the semiconductor chip and combining the electric characteristics of the semiconductor chips with positional information concerning the semiconductor chips on the wafer;
- and
- a lithography data adjusting step of adjusting electron beam lithography data used by the electron beam lithography apparatus on the basis of a variation in the electric characteristic of the semiconductor chip within a surface of the wafer,
- wherein the wafer processing step, the wafer cutting step, the semiconductor testing step, and the lithography data adjusting step are repeatedly carried out.
Dependencies are inferred from the claim text.