Terminal structure and semiconductor device
AssigneeTDK Corporation
InventorsKenichi Yoshida, Makoto Orikasa, Hideyuki Seike, Yuhei Horikawa, Hisayuki Abe
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Abstract
The present invention relates to a terminal structure comprising: a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, a height Hbm at which the bump has a maximum diameter (Lbm) is lower than a maximum height Hu of the under-bump metal layer.
Claims6
A terminal structure comprising:
- a base material;
- an electrode formed on the base material;
- an insulating coating layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode;
- an under-bump metal layer filling the opening and covering part of the insulating coating layer;
- and
- a dome-shaped bump covering the under-bump metal layer, wherein
- in a cross section along a lamination direction, a height at which the bump has a maximum diameter is lower than a maximum height of the under-bump metal layer.
Dependencies are inferred from the claim text.