US 9,070,605 B2 · Display apparatus and method of manufacturing the display apparatus

Abstract

A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion. The display apparatus further includes a gate insulating layer disposed on the channel portion, a gate electrode disposed on the gate insulating layer, and a protective layer disposed on the gate electrode and the buffer layer and having a contact hole. The display apparatus further includes a transparent electrode overlapping a portion of the protective layer and electrically connected to one of the source electrode and the drain electrode through the contact hole. The transparent electrode includes a transparent metal layer and a transparent conductive oxide layer overlapping the transparent metal layer.

Claims12

Dependent claims

A method of manufacturing a display apparatus, the method comprising:

forming a buffer layer on a base substrate;
forming an oxide semiconductor layer on the buffer layer;
forming a gate insulating layer on a first portion of the oxide semiconductor layer;
forming a gate electrode on the gate insulating layer;
forming a protective layer on the gate electrode and the buffer layer, the protective layer having a first contact hole;
processing a second portion of the oxide semiconductor layer such that an electrical resistance of the second portion of the oxide semiconductor layer is different from an electrical resistance of the first portion of the oxide semiconductor layer;
forming a transparent metal layer that is electrically connected to the second portion of the oxide semiconductor layer through the first contact hole;
and
oxidizing a first portion of the transparent metal layer to form an oxide insulating layer.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/477,626Filed 4 Sep 2014 · division

Priority

KR 10-2012-00864457 Aug 2012

Published

US 2014/0042428 A125 Dec 2014

Granted

30 Jun 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
H10D 30/6756
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate: amorphous oxide semiconductors
H10D 64/62
Electrodes characterised by their materials: electrodes ohmically coupled to a semiconductor

Display apparatus and method of manufacturing the display apparatus

Life of this patent

Display apparatus and method of manufacturing the display apparatus

Life of this patent

Abstract

Claims12