Method of fabricating a semiconductor device

An electronic equipment comprising:

• an N-channel transistor including:
• an island-like single crystalline semiconductor layer comprising silicon disposed over a silicon substrate with at least a first silicon oxide layer and a second silicon oxide layer interposed therebetween, wherein the island-like single crystalline semiconductor layer is in contact with the first silicon oxide layer and has at least two channel formation regions, a source region and a drain region;
• a gate insulating film formed on the island-like single crystalline semiconductor layer;
• and
• at least two gate wiring lines formed over the two channel formation regions with the gate insulating film interposed therebetween;
• and
• an interlayer insulating film formed over the N-channel transistor,
• wherein the interlayer insulating film comprises silicon nitride and is in direct contact with at least an upper surface of the two gate wiring lines,
• wherein the first and second silicon oxide layers are bonded to each other with a bonded interface therebetween,
• wherein the island-like single crystalline semiconductor layer is 20 to 100 nm thick,
• wherein the island-like single crystalline semiconductor layer is formed from a part of another single crystal silicon substrate,
• wherein the island-like single crystalline semiconductor layer contains oxygen and a concentration of the oxygen is less than 2×1018 atoms/cm3,
• wherein the interlayer insulating film is in direct contact with at least a portion of the source region and the drain region, and
• wherein the first silicon oxide layer is an oxide layer which is formed by thermally oxidizing silicon.

An electronic equipment comprising:

• an N-channel transistor including:
• an island-like single crystalline semiconductor layer comprising silicon disposed over a silicon substrate with at least a first silicon oxide layer and a second silicon oxide layer interposed therebetween, wherein the island-like single crystalline semiconductor layer is in contact with the first silicon oxide layer and has at least two channel formation regions, a source region and a drain region;
• a gate insulating film formed on the island-like single crystalline semiconductor layer;
• at least two gate wiring lines formed over the two channel formation regions with the gate insulating film interposed therebetween;
• silicon oxide films formed on side surfaces of the two gate wiring lines;
• and
• side walls formed adjacent to the side surfaces of the two gate wiring lines with the silicon oxide films therebetween;
• a first interlayer insulating film comprising silicon nitride formed over the N-channel transistor;
• and
• a second interlayer insulating film comprising silicon nitride formed over the first interlayer insulating film,
• wherein the first and second silicon oxide layers are bonded to each other with a bonded interface therebetween,
• wherein the island-like single crystalline semiconductor layer is 20 to 100 nm thick,
• wherein upper portions of the source region and the drain region of the N-channel transistor comprise a metal silicide,
• wherein the island-like single crystalline semiconductor layer is formed from a part of another single crystal silicon substrate,
• wherein the first interlayer insulating film comprises silicon nitride and is in direct contact with the side walls,
• wherein the island-like single crystalline semiconductor layer contains oxygen and a concentration of the oxygen is less than 2×1018 atoms/cm3,
• wherein the first interlayer insulating film is in direct contact with at least a portion of the source region and the drain region, and
• wherein the first silicon oxide layer is an oxide layer which is formed by thermally oxidizing silicon.

A semiconductor device comprising:

• a transistor including:
• an island-like single crystalline semiconductor layer comprising silicon disposed over a silicon substrate with at least a first silicon oxide layer and a second silicon oxide layer interposed therebetween, wherein the island-like single crystalline semiconductor layer is in contact with the first silicon oxide layer and has at least a channel formation region, a source region and a drain region;
• a gate insulating film formed on the island-like single crystalline semiconductor layer;
• a gate wiring line formed over the channel formation region with the gate insulating film interposed therebetween;
• silicon oxide films formed on side surfaces of the gate wiring line;
• and
• side walls comprising silicon nitride formed adjacent to the side surfaces of the gate wiring line with the silicon oxide films interposed therebetween, and
• an interlayer insulating film comprising silicon nitride formed over the transistor, the interlayer insulating film being in contact with at least an upper surface of the gate wiring line,
• wherein the first and second silicon oxide layers are bonded to each other with a bonded interface therebetween,
• wherein the island-like single crystalline semiconductor layer is 20 to 100 nm thick,
• wherein the interlayer insulating film is in direct contact with at least a portion of the source region and the drain region, and
• wherein the first silicon oxide layer is an oxide layer which is formed by thermally oxidizing silicon.