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US 9,070,597 B2Granted
Thin film transistor, display substrate and method of manufacturing a thin film transistor
AssigneesSamsung Display Co., Ltd., Kobe Steel, Ltd.
InventorsByung-Du Ahn, Gun-Hee Kim, Jun-Hyung Lim, Toshihiro Kugimiya, Hiroshi Goto, Aya Miki, Shinya Morita
Life of this patent
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Abstract
A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.
Claims16
A thin film transistor comprising:
- a gate electrode;
- a channel overlapped with the gate electrode and comprising an indium-zinc-tin oxide sourced from a source comprising a single phase indium-zinc-tin oxide;
- a source electrode contacting the channel;
- and
- a drain electrode spaced apart from the source electrode and contacting the channel,
- wherein the single phase indium-zinc-tin oxide of the source is represented by the following Chemical Formula 1
- (x)ZnIn2O4(1−x)Zn2SnO4, wherein 0<x<0.45. Chemical Formula 1
4 more elements
A display substrate comprising:
- a gate electrode on a base substrate;
- a channel overlapped with the gate electrode and comprising indium-zinc-tin oxide sourced from a source comprising a single phase indium-zinc-tin oxide;
- a source electrode contacting the channel;
- a drain electrode spaced apart from the source electrode and contacting the channel;
- and
- a pixel electrode electrically connected to the drain electrode,
- wherein the single phase indium-zinc-tin oxide of the source is represented by the following Chemical Formula 1
- (x)ZnIn2O4(1−x)Zn2SnO4, wherein 0<x<0.45. Chemical Formula 1
5 more elements
A method for manufacturing a thin film transistor, the method comprising:
- providing an oxide semiconductor layer from a source comprising a single phase indium-zinc-tin oxide;
- and
- patterning the oxide semiconductor layer to form a channel of the thin film transistor,
- wherein the single phase indium-zinc-tin oxide of the source is represented by the following Chemical Formula 1
- (x)ZnIn2O4(1−x)Zn2SnO4 wherein 0<x<0.45. Chemical Formula 1
2 more elements
A thin film transistor comprising:
- a gate electrode;
- a channel overlapped with the gate electrode and comprising an indium-zinc-tin oxide sourced from a source comprising a single phase indium-zinc-tin oxide;
- a source electrode contacting the channel;
- and
- a drain electrode spaced apart from the source electrode and contacting the channel
- wherein the indium-zinc-tin oxide of the channel is represented by the following Chemical Formula 1
- (x)ZnIn2O4(1−x)Zn2SnO4, wherein 0<x<0.45. Chemical Formula 1
4 more elements
Dependencies are inferred from the claim text.