Adjusting intensity of laser beam during laser operation on a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLee-Te Tseng, Chih-Hsien Ou, Kun-Hsiang Lin, Yi-Hann Chen, Ming-Te Chen
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Abstract
Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.
Claims20
A method for adjusting an intensity of a laser beam applied to a semiconductor device, wherein an applied intensity of the laser beam is indicative of a magnitude at which the laser beam is emitted and wherein a reflection intensity of the laser beam is indicative of a magnitude at which the laser beam is reflected from the semiconductor device, comprising:
- measuring the reflection intensity of the laser beam, and
- adjusting the applied intensity of the laser beam as a function of the reflection intensity.
A method of annealing a semiconductor device, comprising:
- applying a laser beam to the semiconductor device to anneal a layer of the semiconductor device;
- measuring a reflection intensity of the laser beam, the reflection intensity indicative of a magnitude at which the laser beam is reflected from the semiconductor device;
- and
- adjusting an applied intensity of the laser beam as a function of the reflection intensity, the applied intensity indicative of a magnitude at which the laser beam is emitted.
A method for performing an anneal operation on a semiconductor device, comprising:
- applying a laser beam at a first intensity to the semiconductor device to anneal a region of the semiconductor device;
- measuring a reflection intensity of the laser beam;
- and
- adjusting the laser beam to have a second intensity as a function of the reflection intensity.
Dependencies are inferred from the claim text.