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US 9,070,584 B2Granted
Buried digitline (BDL) access device and memory array
AssigneeNanya Technology Corporation
InventorsShyam Surthi, Lars Heineck
Life of this patent
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Abstract
A memory array includes a plurality of digitline (DL) trenches extending along a first direction; a buried digitline between the DL trenches; a trench fill material layer sealing an air gap in each of the DL trenches; a plurality of wordline (WL) trenches extending along a second direction; an active chop (AC) trench disposed at one end of the buried digitline; a shield layer in the air gap; and a sidewall conductor around the sidewall of the AC trench.
Claims11
A memory array, comprising:
- a substrate;
- a plurality of digitline (DL) trenches in the substrate, the DL trenches extending along a first direction, wherein each of the DL trench comprises an upper portion and a lower, widened portion;
- a buried digitline disposed in a body portion of the substrate between adjacent two of the DL trenches, wherein the buried digitline and the lower, widened portions of the adjacent two of the DL trenches are situated in a same horizontal plane, and wherein the buried digitline is in direct contact with the lower, widened portions of the adjacent two of the DL trenches;
- a trench fill material layer in each of the DL trenches, wherein the trench fill material layer completely fills the upper portion of each of the DLtrenches and conformally lines interior surface of the lower, widened portion of each of the DL trenches to thereby seal an air gap within the lower, widened portion;
- a plurality of wordline (WL) trenches extending along a second direction;
- an active chop (AC) trench disposed at one end of the buried digitline;
- a shield layer in the air gap;
- and
- a sidewall conductor around a sidewall of the AC trench.
6 more elements
Dependencies are inferred from the claim text.