Vertical-type semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Hoon Son, Jong-Wook Lee, Jong-Hyuk Kang
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Abstract
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.
Claims11
A method of manufacturing a vertical-type non-volatile memory device, comprising:
- alternatively stacking two different layers on a substrate;
- partially etching the two different layers forming openings that have a linear shape extending in a first direction to form a multi-layered structure, the multi-layered structure including a plurality of insulation layer patterns extending in the openings perpendicular with respect to the substrate and spaced apart from each other;
- forming a trench penetrating the two different layers vertically with respect to the substrate;
- forming at least one of a tunnel oxide layer, a charge-trapping layer and a blocking dielectric layer in the trench;
- forming a semiconductor layer in the trench;
- forming a layer including metal on the semiconductor layer;
- thermally treating the layer including metal and the semiconductor layer;
- and
- removing a portion of the layer including metal,
- wherein forming the trench penetrating the two different layers comprises:
- removing a portion of the multi-layered structure between the openings to from the trench that extends in the first direction.
Dependencies are inferred from the claim text.