Semiconductor device having fin structure in peripheral region and method for forming the same
AssigneeSK hynix Inc.
InventorHyun Jin Lee
Life of this patent
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Abstract
In order to fabricate a semiconductor device, a semiconductor substrate in a peripheral region is etched to form a plurality of holes. A gap-filling material is buried in the holes of the semiconductor substrate in the peripheral region, and first and second device isolation films are formed in the semiconductor device. A fin structure is formed by recessing the gap-filling material, and a gate is formed over a surface including the fin structure. As a result, operation characteristics of transistors formed in the peripheral region are improved and the short channel effects are also reduced.
Claims20
A semiconductor device comprising:
- an active region disposed in a semiconductor substrate of a peripheral region;
- one or more first device isolation regions disposed in the active region;
- a second device isolation region defining the active region;
- a fin-type active region that includes divided portions of the active region defined by the one or more first device isolation regions;
- an insulation film filling the first and second device isolation regions;
- and
- a gate disposed over the fin-type active region,
- wherein a top surface of the insulation film is disposed below top surfaces of the fin-type active region.
An electronic device comprising:
- a memory device configured to store data and read the stored data in response to a data input/output (I/O) control signal;
- and
- a memory controller configured to generate the data I/O control signal, and control data I/O operations of the memory device,
- wherein the memory device includes:
- an active region disposed in a semiconductor substrate of a peripheral region;
- one or more of first device isolation regions disposed in the active region;
- a second device isolation region defining the active region;
- a fin-type active region that includes divided portions of the active region defined by the one or more first device isolation regions;
- an insulation film filling the first and second device isolation regions;
- and
- a gate disposed over the fin-type active region, and
- wherein a top surface of the insulation film is disposed below top surfaces of the fin-type active region.
Dependencies are inferred from the claim text.