Semiconductor device and related fabrication methods

A method of fabricating a semiconductor device on a doped region of semiconductor material having a first conductivity type, the method comprising:

• forming a first region having a second conductivity type within the doped region by implanting ions of the second conductivity type at a first energy level using an implantation mask;
• forming a body region having the first conductivity type overlying the first region by implanting ions of the first conductivity type at a second energy level using the implantation mask, wherein the second energy level is less than the first energy level;
• and
• forming a drift region having the second conductivity type within the doped region, by implanting ions of the second conductivity type using a second implantation mask, the second implantation mask masking the body region and having lateral edges offset from lateral boundaries of the body region, wherein:
• a portion of the doped region remains between the body region and the drift region;
• and
• at least a portion of the drift region abuts at least a portion of the first region.

A semiconductor device structure comprising:

• a drift region of semiconductor material having a first conductivity type;
• a drain region of semiconductor material within the drift region, the drain region having the first conductivity type;
• a body region of semiconductor material having a second conductivity type;
• a buried region of semiconductor material having the first conductivity type;
• a doped region of semiconductor material having the second conductivity type;
• and
• an insulating layer of dielectric material, wherein:
• a first portion of the doped region overlies the insulating layer between the buried region and the insulating layer;
• a second portion of the doped region overlies the insulating layer between the drift region and the insulating layer;
• the body region overlies a first portion the buried region;
• a lower portion of the drift region abuts at least a second portion of the buried region;
• and
• the drift region is formed using an implantation mask masking the body region and having lateral edges offset from lateral boundaries of the body region such that a third portion of the doped region remains between the body region and the drift region.