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US 9,070,571 B2Granted
Power switching module with reduced oscillation
AssigneeInfineon Technologies AG
InventorsJosef Lutz, Hans-Joachim Schulze
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Abstract
A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is larger than the first band-gap. The Schottky-diode is electrically connected in parallel to the pn-diode.
Claims26
A power switching module, comprising:
- a three-terminal power semiconductor device designed for a rated current;
- and
- a freewheeling unit comprising a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap, wherein the second band gap is larger than the first band-gap, wherein the Schottky-diode is electrically connected in parallel to the pn-diode, and
- wherein the pn-diode is operable to have a reverse peak current at the rated current of the power semiconductor device which is from about 0.5 to about 1.8 of a capacitive current peak of the Schottky-diode.
1 more element
A power switching module, comprising:
- a three-terminal power semiconductor device;
- and
- a freewheeling unit comprising a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap, wherein the second band-gap is larger than the first band-gap, wherein the Schottky-diode is electrically connected in parallel to the pn-diode,
- wherein the pn-diode has a total pn-junction area,
- wherein the Schottky-diode has a total Schottky junction area,
- wherein a ratio between the total pn-junction area and the total Schottky-junction area is from about 0.08 to about 0.3, and
- wherein a ratio between a current through the pn-diode and a current through the Schottky-diode is from about 0.05 and 0.25 for a given total current through the pn-diode and the Schottky-diode.
4 more elements
A power switching module, comprising:
- a three-terminal power semiconductor device;
- and
- a freewheeling unit comprising a pn-diode integrated in a first semiconductor material having a first band-gap, an inductor electrically connected in series with the pn-diode, and a Schottky-diode integrated in a second semiconductor material having a second band-gap, wherein the second band gap is larger than the first band-gap, and wherein the Schottky-diode is electrically connected in parallel to the pn-diode and the inductor.
Dependencies are inferred from the claim text.