Silicon carbide substrate and method of manufacturing silicon carbide substrate

A silicon carbide substrate comprising a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,

• said main surface including
• a first side parallel to the <11-20> direction,
• a second side in a direction perpendicular to said first side, and
• a third side connecting said first side to said second side, wherein a length of said third side projected in a direction in which said first side extends is different from a length of said third side projected in a direction in which said second side extends.

A silicon carbide substrate comprising a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,

• said main surface including
• a first side parallel to the <11-20> direction,
• a second side in a direction perpendicular to said first side, and
• a mark formed in vicinity of a corner where said first side is connected to said second side.

A method of manufacturing a silicon carbide substrate, comprising the steps of:

• preparing a silicon carbide ingot;
• cutting a silicon carbide substrate including a main surface having a circular or elliptical plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane from said ingot;
• and
• forming a first orientation flat parallel to the <11-20> direction and a second orientation flat being in a direction intersecting said first orientation flat and being different from said first orientation flat in length on said silicon carbide substrate.

A method of manufacturing a silicon carbide substrate, comprising the steps of:

• preparing a silicon carbide ingot;
• forming a first orientation flat parallel to a <11-20> direction and a second orientation flat being in a direction intersecting said first orientation flat and being different from said first orientation flat in length on said ingot;
• and
• cutting a silicon carbide substrate including a main surface having a circular or elliptical plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in the <11-20> direction with respect to a {0001} plane from the ingot including said first and second orientation flats.

A method of manufacturing a silicon carbide substrate, comprising the steps of:

• preparing a silicon carbide ingot;
• and
• cutting a silicon carbide substrate including a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,
• said silicon carbide substrate being cut from said ingot in said cutting step such that said main surface includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to said first side, and a third side connecting said first side to said second side, with a length of said third side projected in a direction in which said first side extends being different from a length of said third side projected in a direction in which said second side extends.

A method of manufacturing a silicon carbide substrate, comprising the steps of

• preparing a silicon carbide ingot;
• processing said ingot such that said ingot includes a first side parallel to a <11-20> direction, a second side in a direction perpendicular to said first side, and a third side connecting said first side to said second side, with a length of said third side projected in a direction in which said first side extends being different from a length of said third side projected in a direction in which said second side extends, on a plane inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in the <11-20> direction with respect to a {0001} plane;
• and
• cutting a silicon carbide substrate including a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in the <1-100> direction as well as at not less than −10° and not more than 10° in the <11-20> direction with respect to the {0001} plane from said ingot.

A method of manufacturing a silicon carbide substrate, comprising the steps of:

• preparing a silicon carbide ingot;
• and
• cutting a silicon carbide substrate including a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a 1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,
• said cutting step including the steps of
• cutting said silicon carbide substrate from said ingot such that said substrate includes a first side parallel to the <11-20> direction and a second side in a direction perpendicular to said first side, and
• forming a mark in vicinity of a corner where said first side is connected to said second side in said main surface.