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US 9,070,565 B2Granted
Power RF amplifiers
AssigneeNXP B.V.
InventorGerard Jean-Louis Bouisse
Life of this patent
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Abstract
A power transistor circuit uses first and second power transistors in differential mode. An inductor arrangement of inductors is formed by wire bonds between the drains. The transistors are in a mirrored configuration, and the inductor arrangement comprises wire bonds which extend between the drain connections across the space between the mirrored transistors.
Claims8
A power transistor physical circuit layout, comprising:
- first and second power transistors, each having an elongate rectangular area with gate connections on a gate side of the elongate area and drain connections on an opposite drain side of the elongate area,
- wherein the drain connections of each transistor connect to a respective output pad enabling use of the two power transistors in a differential amplifier configuration;
- and
- an inductor arrangement of inductors formed by wire bonds between the drain connections,
- wherein the gate side of the first transistor faces the gate side of the second transistor in a mirrored arrangement, and the inductor arrangement comprises wire bonds which extend between the drain connections across the gate sides of the first and second power transistors.
2 more elements
Dependencies are inferred from the claim text.