Method for depositing a chlorine-free conformal sin film
AssigneeNovellus Systems, Inc.
InventorsDennis Hausmann, Jon Henri, Bart van Schravendijk, Easwar Srinivasan
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Abstract
Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.
Claims19
A method of forming a silicon nitride material on a substrate in a reaction chamber, comprising:
- periodically exposing the substrate to a vapor phase flow of a halogen-free silicon-containing reactant wherein the silicon containing reactant is adsorbed onto the surface of the substrate;
- exposing the substrate to a vapor phase flow of a first nitrogen-containing reactant wherein the nitrogen-containing reactant is adsorbed onto the surface of the substrate;
- and
- periodically igniting a plasma in the reaction chamber when vapor phase nitrogen-containing reactant is present in the reaction chamber and the vapor phase flow of the silicon-containing reactant has ceased, wherein the plasma is an RF plasma having a power between 0.15 W/cm2 and 3 W/cm2;
- wherein the pressure in the reaction chamber is cycled such that it is higher during the vapor phase flow of the silicon-containing reactant than when the vapor phase flow of the silicon-containing reactant has ceased.
Dependencies are inferred from the claim text.