Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsKazuyuki Toyoda, Yukitomo Hirochi, Tetsuo Yamamoto, Kazuhiro Morimitsu, Tadashi Takasaki
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied.
Claims19
A method of manufacturing a semiconductor device, comprising:
- supplying a precursor gas to a substrate;
- supplying a reaction gas to a plasma generation region;
- supplying high frequency power to the plasma generation region;
- and
- generating plasma of the reaction gas, after the act of supplying the high frequency power to the plasma generation region is initiated, by supplying the reaction gas to the plasma generation region and adjusting a pressure in the plasma generation region from a first pressure to a second pressure lower than the first pressure.
A substrate processing apparatus, comprising:
- a process chamber configured to accommodate a substrate therein;
- a precursor gas supply part configured to supply a precursor gas to the substrate;
- a reaction gas supply part configured to supply a reaction gas to the substrate;
- a plasma generation region to which the reaction gas is supplied to excite the reaction gas into a plasma state;
- an exciting part configured to supply high frequency power to the plasma generation region before the reaction gas supply part supplies the reaction gas to the plasma generation region;
- and
- a control part configured to control the reaction gas supply part and the exciting part such that after supplying of the high frequency power to the plasma generation region is initiated, a plasma of the reaction gas is generated by supplying the reaction gas to the plasma generation region and adjusting a pressure in the plasma generation region from a first pressure to a second pressure lower than the first pressure.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform processes of:
- supplying a precursor gas to a substrate;
- supplying a reaction gas to a plasma generation region;
- supplying high frequency power to the plasma generation region;
- and
- generating plasma of the reaction gas, after the act of supplying the high frequency power to the plasma generation region is initiated, by supplying the reaction gas to the plasma generation region and adjusting a pressure in the plasma generation region from a first pressure to a second pressure lower than the first pressure.
Dependencies are inferred from the claim text.