Proximity mask for ion implantation with improved resistance to thermal deformation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorBenjamin B. Riordon
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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorBenjamin B. Riordon
Estimating the term…
A proximity mask for ion implantation that is configured to resist thermal deformation in a direction normal to an ion beam projected on and through the mask. The mask may include a frame defining a central aperture and a plurality of ribs disposed within the aperture. The ribs may define a doping pattern and may be configured to deform in a direction normal to an ion beam projected thereon and to resist deformation in a direction orthogonal to an ion beam projected thereon upon being heated. Particularly, at least one of the ribs may include a bridge member, first and second perpendicular support legs extending perpendicularly from the bridge member, and first and second parallel support legs that extend perpendicularly from the first and second perpendicular support legs, respectively. The first and second parallel support legs may be attached to the frame.
A proximity mask for ion implantation, the proximity mask comprising:
A proximity mask for ion implantation, the proximity mask comprising:
Dependencies are inferred from the claim text.