Ion beam dimension control for ion implantation process and apparatus, and advanced process control

An ion implantation tool comprising:

• an ion beam generator for generating an ion beam;
• at least one magnet device for directing said ion beam towards a stage for receiving a substrate thereon;
• said stage positioned such that said ion beam is incident upon said substrate in a z-direction when said substrate is on said stage, said stage configured to translate both in an x-direction and a y-direction with respect to said ion beam;
• and
• at least one set of opposed electrodes disposed outside said ion beam and controllable to change size and position of an area of said ion beam incident upon said substrate,
• wherein said at least one set of opposed electrodes comprise a plurality of separately controllable sets of opposed electrodes disposed at different locations along a beam direction of said ion beam, and said ion implantation tool is configured to sweep said ion beam back and forth in one of said x-direction and said y-direction when said stage translates in the other of said x-direction and said y-direction;
• and
• further comprising a set of opposed blocker members disposed on opposed sides of said ion beam, each said blocker member positionable by being inwardly extendable into a path of said ion beam such that said set of opposed blocker members are moveable in opposite directions into said ion beam from opposed sides of said ion beam, and moveable to change said size and a shape of said ion beam.

An ion implantation tool comprising:

• an ion beam generator for generating an ion beam;
• at least one magnet device for directing said ion beam towards a substrate holder;
• said substrate holder including a moveable stage for receiving a substrate thereon such that said ion beam is incident upon said substrate when said substrate is on said stage, said moveable stage translatable at varying speeds in each of orthogonal directions;
• a plurality of sets of opposed electrodes disposed outside said ion beam, and including sets with orthogonal electrical fields, said sets of opposed electrodes separately controllable to change size and shape of said ion beam incident upon said substrate, and said ion implantation tool is configured to sweep said ion beam back and forth in one of said x-direction and said y-direction when said stage translates in the other of said x-direction and said y-direction;
• and
• a set of opposed graphite blocker members disposed on opposed sides of said ion beam, each said graphite blocker member positionable by being inwardly extendable into a path of said ion beam such that said set of opposed graphite blocker members are moveable in opposite directions into said ion beam from opposed sides of said ion beam, and moveable to change said size and shape of said ion beam incident upon said substrate;
• wherein said moveable stage is adapted to scan said substrate at varying speeds with respect to said ion beam.