Internal current measurement for age measurements

A memory system, comprising:

• a plurality of non-volatile memory devices;
• a plurality of memory controllers;
• a processor;
• and
• memory for storing one or more programs for execution by the processor, the one or more programs including instructions for performing operations comprising:
• initiating execution of a memory operation in a portion of a non-volatile memory device;
• measuring a current corresponding to total current drawn by at least the portion of the non-volatile memory device over the duration of a sampling window for the memory operation;
• determining an age metric for at least the portion of the non-volatile memory device based on the measured current;
• in accordance with a determination that the age metric satisfies one or more predefined threshold criteria, adjusting one or more configuration parameters associated with at least the portion of the non-volatile memory device;
• and
• after the adjusting, reading data from and writing data to the portion of the non-volatile memory device according to the one or more adjusted configuration parameters.

A non-transitory computer readable storage medium, storing one or more programs for execution by one or more processors, the one or more programs including instructions for performing operations comprising:

• initiating execution of a memory operation in a portion of a non-volatile memory device;
• measuring a current corresponding to total current drawn by at least the portion of the non-volatile memory device over the duration of a sampling window for the memory operation;
• determining an age metric for at least the portion of the non-volatile memory device based on the measured current;
• in accordance with a determination that the age metric satisfies one or more predefined threshold criteria, adjusting one or more configuration parameters associated with at least the portion of the non-volatile memory device;
• and
• after the adjusting, reading data from and writing data to the portion of the non-volatile memory device according to the one or more adjusted configuration parameters.

The non-transitory computer readable storage medium of 19, wherein the one or more adjusted configuration parameters include at least one of:

• a storage density of the non-volatile memory device or the portion of the non-volatile memory device;
• an error correction code (ECC) strength;
• and
• a wear leveling setting.

The non-transitory computer readable storage medium of 19, wherein the age metric is a numerical metric having a value that varies with changes in the measured current, and determining the age metric is based on the measured current and one or more additional factors selected from the group consisting of:

• a program-erase (PE) cycle count corresponding to a number of PE cycles performed on the portion of the non-volatile memory device;
• a number of erase loops required for successfully executing the memory operation, wherein the memory operation is an erase operation;
• and
• a measured bit error rate (BER) of the portion of the non-volatile memory device.