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US 9,070,479 B2Granted
Systems and methods of updating read voltages
AssigneeSanDisk Technologies LLC
InventorsEran Sharon, Idan Alrod
Life of this patent
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Abstract
A method includes, in a data storage device that includes a non-volatile memory, reading data from the non-volatile memory using a first read voltage. The method includes determining a first count of errors in the data having a first error type and a second count of errors in the data having a second error type. A value of the first read voltage is selectively updated based on a comparison of the first count to the second count.
Claims25
A method comprising:
- in a data storage device that includes a non-volatile memory, the non-volatile memory including a multi-level cell (MLC) portion configured to store multiple bits per storage element, performing:
- reading data from the MLC portion using a first read voltage;
- wherein the data is read as a first logical page of multiple logical pages stored at a group of storage elements;
- reading second data corresponding to a second logical page of the multiple logical pages stored at the group of storage elements;
- categorizing at least one error in the data as having a first error type or a second error type at least partially based on a bit position of the at least one error in the data and based on a bit value at the bit position in the second data;
- determining a first count of errors in the data that are categorized as having the first error type and a second count of errors in the data that are categorized as having the second error type;
- and
- selectively updating a value of the first read voltage based on a comparison of the first count to the second count.
5 more elements
A method comprising:
- in a data storage device that includes a non-volatile memory, performing:
- reading data from the non-volatile memory using a first read voltage;
- determining a first count of errors in the data having a first error type and a second count of errors in the data having a second error type;
- and
- selectively updating a value of the first read voltage based on a comparison of the first count to the second count,
- wherein the data is read from a first portion of a particular region of the non-volatile memory during a sequential read operation and wherein after updating the value of the first read voltage, the updated value of the first read voltage is used during reading of the second portion of the particular region during the sequential read operation, and
- wherein determining the first count of errors and the second count of errors includes accessing, during the sequential read operation, a portion of an error correction code (ECC) decoder memory that stores bit information of the data and error location information of the data.
4 more elements
A data storage device comprising:
- a non-volatile memory including a multi-level cell (MLC) portion configured to store multiple bits in each storage element of the MLC portion;
- and
- a controller configured to:
- receive data read from the MLC portion of the non-volatile memory using a first read voltage, wherein the data is received as a first logical page of multiple logical pages stored at a group of storage elements;
- receive second data corresponding to a second logical page of the multiple logical pages stored at the group of storage elements;
- categorize at least one error in the data as having a first error type or a second error type at least partially based on a bit position of the at least one error in the data and based on a bit value at the bit position in the second data;
- and
- selectively update a value of the first read voltage based on a comparison of a first count of errors in the data that are categorized as having the first error type to a second count of errors in the data that are categorized as having the second error type.
5 more elements
Dependencies are inferred from the claim text.