Variable resistive memory device and method of fabricating the same
AssigneesHynix Semiconductor Inc., Industry-Academic Cooperation Foundation, Yonsei University
InventorsMann Ho Cho, Ju Heyuck Baeck, Tae Hyeon Kim, Hye Jin Choi
Life of this patent
Estimating the term…
Abstract
A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbmSen material layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbmSen material layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.
Claims18
A variable resistive memory device, comprising:
- an array of a plurality of memory cells,
- wherein each of the plurality of memory cells includes:
- first and second electrodes;
- and
- a phase change material layer interposed between the first electrode and the second electrode,
- wherein the phase change material layer includes a separation structure in which a first layer of a plurality of Sb atoms are in contact with a second layer of a plurality of Se atoms to form a contact interface therebetween, and
- wherein the phase change material layer includes a phase of Sb4Se4 monoclinic crystal structure.
A variable resistive memory device, comprising:
- an array of a plurality of memory cells,
- wherein each of the plurality of memory cells includes;
- first and second electrodes;
- and
- a phase change material layer interposed between the first electrode and the second electrode,
- wherein the phase change material layer includes a separation structure in which a first layer of a plurality of Sb atoms are in contact with a second layer of a plurality of Se atoms to form contact interface therebetween, and
- wherein first bit information is allocated to a first resistance value by an Sb4Se4 monoclinic crystal structure generated by applying a first set pulse to the phase change material layer.
A method of manufacturing a variable resistive memory device, the method comprising:
- forming a first electrode;
- forming a phase change material layer on the first electrode;
- and
- forming a second electrode on the phase change material layer,
- wherein the phase change material layer includes a separation structure in which a first layer of a plurality of Sb atoms are in contact with a second layer of a plurality of Se atoms to form contact interface therebetween, and
- wherein the phase change material layer includes a phase of Sb4Se4 monoclinic crystal structure.
Dependencies are inferred from the claim text.