Back to results
US 9,070,465 B2Granted
Anti-fuse circuit using MTJ breakdown and semiconductor device including same
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Pil Son, Chul-Woo Park, Hong-Sun Hwang, Hyun-Ho Choi
Life of this patent
Estimating the term…
Abstract
An anti-fuse circuit includes an array of anti-fuses. Each anti-fuse has a tunneling magneto-resistance (TMR) element series connected with a transistor, such that breakdown of a magnetic tunnel junction (MTJ) in response to an applied first voltage stores fuse information. A sensing circuit senses and amplifies respective output signals provided by the anti-fuses.
Claims8
An anti-fuse circuit comprising:
- an array of anti-fuses, each anti-fuse comprising a tunneling magneto-resistance (TMR) element series connected with a transistor and configured to breakdown a magnetic tunnel junction (MTJ) of the TMR element in response to an applied first voltage, such that alternately provided normal resistance and breakdown resistance for the TMR define an output signal for the anti-fuse that indicates fuse information stored by the anti-fuse;
- and
- a sensing circuit configured to sense and amplify the respective output signals provided by the anti-fuses.
Dependencies are inferred from the claim text.