Memory element and memory apparatus with a plurality of magnetic layers and an oxide layer

A memory apparatus, comprising:

• a memory element having a layered structure, comprising:
• a memory layer having a magnetization wherein the magnetization direction is configured to be changed depending on information by applying a current in a lamination direction of the layered structure to record the information in the memory layer;
• a magnetization-fixed layer;
• an intermediate layer comprising a non-magnetic material and disposed between the memory layer and the magnetization-fixed layer;
• and
• an oxide layer in contact with a first surface of the memory layer, wherein a second surface of the memory layer opposed to the first surface is in contact with the intermediate layer, and wherein at least a portion of the oxide layer at the interface of the oxide layer and the memory layer comprises an Li-based oxide.