Memristor device with resistance adjustable by moving a magnetic wall by spin transfer and use of said memristor in a neural network

A method for adjusting resistance in an adjustable-resistance device comprising a stack of two magnetic layers separated by an insulating or semi-conductor layer (I), the stack forming a bar, a first of the two magnetic layers (FM1) comprising a magnetic wall separating two zones having homogeneous directions of magnetization substantially parallel to the longitudinal axis of the bar but in opposing directions, the magnetic wall being substantially perpendicular to the longitudinal axis of the bar, the second of the two magnetic layers (FM2) having a homogeneous direction of magnetization substantially parallel to the longitudinal axis of the bar, said device comprising means for moving the magnetic wall in the first magnetic layer (FM1) along the bar by applying a spin-polarized electric current (iE), the method comprising:

• injecting the spin-polarized current (iE) through the magnetic wall;
• moving the magnetic wall in a continuous range between a minimum resistance and a maximum resistance;
• and
• continuously adjusting the resistance in the device,
• wherein the minimum resistance is determined when magnetization directions of the two magnetic layers (FM1, FM2) are parallel with respect to each other and the maximum resistance is determined when the magnetization directions of the two magnetic layers (FM1, FM2) are opposite with respect to each other.