Programming method of nonvolatile memory device
AssigneeSK hynix Inc.
InventorTae-Gyun Kim
Life of this patent
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Abstract
Provided is a programming method of a nonvolatile memory device which includes a plurality of strings each including a source select transistor, a plurality of memory cells, and a drain select transistor which are connected in series between a common source line and a bit line. The programming method includes: applying a first voltage to the common source line during a first period in which a channel of a plurality of memory cells of an unselected string is floated; and applying a second voltage increased more than the first in voltage to the common source line during a second period in which a selected memory cell is programmed, when a selected word line belongs to a word line group adjacent to the common source line.
Claims12
A programming method for a nonvolatile memory device that includes a plurality of strings, each including a source select transistor, a plurality of memory cells, and a drain select transistor that are connected in series between a common source line and a bit line, the programming method comprising:
- applying a first voltage to the common source line during a first period in which a channel of a plurality of memory cells of an unselected string is floated;
- and
- applying, when a selected word line belongs to a word line group adjacent to the common source line, a second voltage that is greater than the first voltage to the common source line during a second period in which a selected memory cell, of the plurality of memory cells, is programmed.
A programming method for a nonvolatile memory device that includes a plurality of strings, each including a source select transistor, a plurality of memory cells, and a drain select transistor that are connected in series between a common source line and a bit line, the programming method comprising:
- applying a first voltage to an unselected bit line during a first period in which a channel of a plurality of memory cells of an unselected string is floated;
- and
- applying, when a selected word line belongs to a word line group adjacent to the bit line, a second voltage that is greater than the first voltage to the unselected bit line during a second period in which a selected memory cell is programmed.
Dependencies are inferred from the claim text.