Methods of forming fine patterns in semiconductor devices

A NAND Flash memory device comprising:

• first and second directly adjacent contact pads defining a first pair of contact pads in a contact region of the NAND Flash memory device, the first pair of contact pads electrically coupled to a first memory cell block in the NAND Flash memory device;
• third and fourth directly adjacent contact pads defining a second pair of contact pads in the contact region of the NAND Flash memory device, the second pair of contact pads electrically coupled to a second memory cell block that is directly adjacent to the first memory cell block;
• a first U shaped dummy conductive line including a first opening that faces a space between the first pair of contact pads;
• and
• a second U shaped dummy conductive line including a second opening that faces away from the first opening and towards a space between the second pair of contact pads.

A NAND Flash memory device comprising:

• a first contact pad in a contact region of the NAND Flash memory device;
• a second contact pad in the contact region directly adjacent to the first contact pad, the first and second contact pads comprising a pair of contact pads for a memory block in the NAND Flash memory device;
• a first non-linear shaped conductive line electrically coupled to the first contact pad, the first non-linear shaped conductive line extending from the first contact pad to the memory block in a cell array region of the NAND Flash memory device;
• a second non-linear shaped conductive line, following a profile of the first non-linear shaped conductive line, the second non-linear shaped conductive line electrically coupled to the second contact pad, the second non-linear shaped conductive line extending from the second contact pad to the memory block in the cell array region;
• and
• a dummy conductive pattern that ends short of ends of the first and second contact pads between the first non-linear shaped conductive line and the second non-linear shaped conductive line.