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US 9,070,446 B1Granted
Semiconductor device
AssigneeSK hynix Inc.
InventorSeiichi Aritome
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes first memory strings coupled between a first common source line formed on a substrate and bit lines formed over the first common source line, and second memory strings coupled between the bit lines and a second common source line formed over the bit lines, wherein each of the bit lines includes a stacked structure of a conductive layer and a silicon layer formed on the conductive layer.
Claims22
A semiconductor device, comprising:
- first memory strings coupled between a first common source line formed on a substrate and bit lines formed over the first common source line;
- and
- second memory strings coupled between the bit lines and a second common source line formed over the bit lines,
- wherein each of the bit lines includes a stacked structure of a conductive layer and a silicon layer formed over the conductive layer.
1 more element
A semiconductor device, comprising:
- first memory strings coupled between first bit lines formed over a substrate and a common source line formed over the first bit lines;
- and
- second memory strings coupled between the common source line and second bit lines formed over the common source line,
- wherein the common source line includes a stacked structure of a conductive layer and a silicon layer formed over the conductive layer.
1 more element
Dependencies are inferred from the claim text.