Memory circuitry with write assist
AssigneeArm Limited
InventorsFrank Guo, Martin Jay Kinkade, Bo Zheng, Brian Reed, Shrisagar Dwivedi
Life of this patent
Estimating the term…
Loading patent…
AssigneeArm Limited
InventorsFrank Guo, Martin Jay Kinkade, Bo Zheng, Brian Reed, Shrisagar Dwivedi
Estimating the term…
Memory circuitry is provided with write assist circuitry for generating a lower power supply voltage during write operations. The write assist circuitry includes a plurality of series connected switches including a header switch and a footer switch. Header bias circuitry generates a header bias voltage and footer bias circuitry generates a footer bias voltage. The header bias voltage is an analog signal with a voltage level intermediate between the power supply voltage level and the ground voltage level. The footer bias voltage is an analog signal with a voltage level intermediate between the power supply voltage level and the ground voltage level. During write operation target bit cells to be written are supplied with the power via a current path through the header switch while these are respectively controlled by the header bias voltage and the footer bias voltage.
Memory circuitry comprising:
Memory circuitry comprising:
A method of operating memory circuitry comprising the steps of:
Dependencies are inferred from the claim text.