Data coding using divisions of memory cell states

A method comprising:

• at a memory including a group of multiple multi-level cell (MLC) memory cells, performing:
• receiving a request for reading first data stored in the group of MLC memory cells;
• and
• in response to the request:
• selecting a first threshold from a plurality of available read thresholds;
• sensing each of the memory cells in the group using the selected first threshold;
• and
• based on the sensing using the first threshold, performing a decoding operation to recover the requested first data, wherein the decoding operation is performed according to a probabilistic coset coding scheme or an algebraic coset coding scheme;
• and
• wherein the requested first data is recovered without use of additional data that depends upon a state of one of the memory cells in the group.

A data storage device comprising:

• a multi-level cell (MLC) memory including a plurality of memory cells;
• and
• a controller coupled to the MLC memory, wherein the controller is configured to:
• divide data bits into disjoint multiple groups of data bits;
• store the divided data bits into the plurality of memory cells, wherein the storing is performed by setting each of the plurality of memory cells to a corresponding state selected from at least three ordered states;
• and
• for each of the multiple groups of data bits, when a request is received to read a particular group of the data bits:
• select a disjoint division of the at least three ordered states of the memory cells to divide the at least three ordered states into a first set of states and a second set of states, wherein each of the states in the first set of states has a higher position than any of the states in the second set of states according to an order of the at least three ordered states;
• for each cell of the plurality of memory cells, determine whether the cell corresponds to the first set of states or the second set of states;
• and
• based on determining whether each cell is in the first set of states or the second set of states, generate the particular group of the data bits in response to the request for reading the particular group of the data bits without use of additional data that depends on a state of one of the memory cells.

A method comprising:

• dividing data bits into disjoint multiple groups of data bits to be stored into memory cells, each of the memory cells configurable to have an erased state or to be programmed to one of multiple programming levels;
• for each particular group of the multiple groups, selecting an index of each of the memory cells that is to be programmed to have a first response to a single sense operation corresponding to the particular group, the first response distinctive from a second response corresponding to each of the memory cells having a non-selected index, wherein the selected indices correspond to a representation of the particular group of data bits, and wherein selecting the indices is performed according to a coset encoding scheme and wherein each particular memory cell is set to the erased state or is programmed to a programming level determined for the index of the particular memory cell;
• and
• programming the memory cells according to the selected indices.

A data storage device comprising:

• a multi-level cell (MLC) memory including a plurality of memory cells;
• and
• a controller coupled to the MLC memory, wherein the controller is configured to:
• divide data bits into disjoint multiple groups of data bits;
• for each particular group of the multiple groups, select an index of each memory cell of the plurality of memory cells that is to be programmed to have a first response to a single sense operation corresponding to the particular group, the first response distinctive from a second response corresponding to each memory cell having a non-selected index, wherein the selected indices correspond to a representation of the particular group of data bits, wherein the controller is configured to select the indices according to a coset encoding scheme and wherein each particular memory cell is set to an erased state or is programmed to a programming level determined for the index of the particular memory cell;
• and
• program the memory cells according to the selected indices.