Data line control for sense amplifiers

An apparatus comprising:

• a first data line;
• a second data line;
• a first transistor to couple the first data line to a first node during a first stage of an aeration of obtaining information from a memory cell associated with the first data line;
• a second transistor to couple the second data line to a second node during the first stage;
• a circuit to apply a first signal to a gate of the first transistor during the operation and to apply a second signal to a gate of the second transistor during the operation;
• a sense amplifier to perform a sense function on the first and second data lines during a second stage of the operation;
• and
• an additional circuit to apply a first additional signal including a first level to the first node during the first stage and to apply a second additional signal including a second level to the second node during the first stage.

An apparatus comprising:

• a memory cell;
• a data line;
• a transistor including a gate to receive a signal and form a conductive path between the data line and a node during at least one of multiple stages of an operation of obtaining information from the memory cell;
• a circuit to apply the signal to the gate of the transistor, such that the signal includes a first level during a first stage of the multiple stages, a second level during a second stage of the multiple stages, and a third level during a third stage of the multiple stages;
• and
• a sense amplifier to cause a signal on the data line during the third stage to have a first level if the information stored in the memory cell has a first value and a second level if the information stored in the memory cell has a second value.

A method comprising:

• applying a signal including a first level to a gate of a first transistor during a first stage of an operation of a memory device to form a conductive path between a data line and a first node;
• causing the signal to change from the first level to a second level during a second stage of the operation if a memory cell associated with the data line is selected to obtain information from the memory cell during the operation;
• keeping the signal at the first level during the second stage if the memory cell is not selected to obtain information from the memory cell during the operation;
• causing the signal to change from one of the first and second levels to a third level during a third stage of the operation;
• and
• performing a sense function on the data line during the third stage.