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US 9,070,388 B2Granted
Plasma processing method
AssigneeHitachi High-Technologies Corporation
InventorsKentaro Yamada, Takeshi Shimada, Takahiro Abe
Life of this patent
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Abstract
In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.
Claims16
In a plasma processing method of dry-etching a magnetic film having a thickness of 200 nm to 500 nm,
- said plasma processing method of dry-etching a sample having a multilayered film formed on said magnetic film, said multilayered film consisting of a resist film, a BARC film underlying the resist film, a Ta film, which is a separate film from the BARC film, underlying said BARC film, a Cr film underlying said Ta film, and an Al2O3 film underlying said Cr film,
- wherein the dry-etching of said sample comprises:
- dry-etching said BARC film using the resist film as a mask;
- dry-etching said Ta film using the resist film as a mask, and using the BARC film etched by the dry-etching of said BARC film as a mask;
- dry-etching said Cr film using the Ta film etched by the dry-etching of said Ta film as a mask;
- dry-etching said Al2O3 film using the Ta film etched by the dry-etching of said Ta film as a mask, and using the Cr film etched by the dry-etching of said Cr film as a mask;
- dry-etching said magnetic film using the Cr film etched by the dry-etching of said Cr film as a mask, and using the Al2O3 film etched by the dry-etching of said Al2O3 film as a mask;
- wherein the dry-etching of said magnetic film is performed using Cl2 gas,
- wherein the dry-etching of said Al2O3 film is performed using a gas consisting of Cl2 gas and BCl3 gas,
- wherein the dry-etching of said Cr film is performed using a as consisting of Cl2 gas, O2 gas and Ar gas,
- wherein the dry-etching said Ta film is performed using a gas consisting Cl2 gas and BCl3, gas, and
- wherein the dry-etching of said BARC film is performed using a gas consisting of Cl2 gas and O2 gas.
9 more elements
In a plasma processing method of dry-etching a magnetic film having a thickness of 200 nm to 500 nm,
- said plasma processing method of dry-etching a sample having a multilayered film formed on said magnetic film, said multilayered film consisting of a resist film, a BARC film underlying the resist film, a TiN film, which is a separate film from the BARC film, underlying said BARC film, a Cr film underlying said TiN film, and an Al2O3 film underlying said Cr film,
- wherein the dry-etching of said sample comprises:
- dry-etching said BARC film using the resist film as a mask;
- dry-etching said TiN film using the resist film as a mask, and using the BARC film etched by the dry-etching of said BARC film as a mask;
- dry-etching said Cr film using the TiN film etched by the dry-etching of said TiN film as a mask;
- dry-etching said Al2O3 film using the TiN film etched by the dry-etching of the TiN film as a mask, and using the Cr film etched by the dry-etching of said Cr film as a mask;
- dry-etching said magnetic film using the Cr film etched by the dry-etching of the Cr film as a mask, and using the Al2O3 film etched by the dry-etching of said Al2O3 film as a mask;
- wherein the dry-etching of said magnetic film is performed using Cl2 gas, wherein the dry-etching of said Al2O3 film is performed using a gas consisting of Cl2 gas and BCl3 gas,
- wherein the dry-etching of said Cr film is performed using a gas consisting of Cl2 gas, O2 gas and Ar gas,
- wherein the dry-etching of said TiN film is performed using a gas consisting of Cl2 gas and BCl3 gas, and
- wherein the dry-etching of said BARC film is performed using a gas consisting of Cl2 gas and O2 gas.
8 more elements
Dependencies are inferred from the claim text.