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US 9,069,925 B2Granted
Method for constant power density scaling
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorClement Hsingjen Wann
Life of this patent
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Abstract
A method for constant power density scaling in MOSFETs is provided. A method for manufacturing an integrated circuit includes computing fixed scaling factors for a first fabrication process based on a second fabrication process, computing settable scaling factors for the integrated circuit to be fabricated using the first fabrication process, determining parameters of the integrated circuit based on the settable scaling factors, and manufacturing the integrated circuit using the determined parameters. The first fabrication process creates devices having a smaller device dimension than the second fabrication process and the settable scaling factors are set based on the fixed scaling factors.
Claims20
A method of manufacturing a circuit, the method comprising:
- receiving a design for an integrated circuit based on a first fabrication process, the design comprising at least a reference to at least one first design library associated with the first fabrication process;
- scaling, by resizing, physical dimensions of a first part of the integrated circuit comprising scalable circuit elements resizable for fabrication according to a second fabrication process creating devices having a smaller device dimension than the first fabrication process;
- altering a second part of the integrated circuit comprising un-scalable circuit elements non-amenable to resizing for fabrication according to the second fabrication process, altering comprising changing a design of the second part of the integrated circuit;
- computing at least one settable scaling factor for the integrated circuit with a power density of the integrated circuit remaining substantially constant or decreasing, the at least one settable scaling factor based on a feature of the integrated circuit fabricated according to the first fabrication process in relation to a feature of the integrated circuit fabricated according to the second fabrication process, the at least one settable scaling factor further based on at least one fixed scaling factor that is based on the fabrication processes and indicating a ratio of a feature of the integrated circuit fabricated according to a first fabrication process to a feature of the integrated circuit fabricated according to a second fabrication process;
- setting, by using a computer, integrated circuit parameters based on the at least one settable scaling factor;
- and
- manufacturing the integrated circuit using the integrated circuit parameters;
- wherein the at least one fixed scaling factor further comprises an area scaling factor, wherein the at least one fixed scaling factor further comprises at least a delay scaling factor and wherein the at least one settable scaling factor further comprises a voltage level scaling factor, and wherein a relationship between the voltage level scaling factor and the at least one fixed scaling factor is expressible as
- k
- V
- ≤
- k
- A
- 4
- ·
- k
- t
- .
- where kV is the voltage level scaling factor, kA is the area scaling factor, and kt is the delay scaling factor.
16 more elements
A method of manufacturing an integrated circuit, the method comprising:
- determining at least one settable scaling factor for the integrated circuit to be fabricated using a first fabrication process, wherein the at least one settable scaling factor indicates an operating characteristic of a feature of the integrated circuit to be fabricated according to the first fabrication process, and wherein the at least one settable scaling factor is computed based on at least one fixed scaling factor while a power density of the integrated circuit remains substantially constant or decreasing;
- determining parameters, by using a computer, of the integrated circuit to be fabricated according to a second fabrication process and based on the at least one settable scaling factor;
- and
- manufacturing the integrated circuit using the parameters;
- wherein the at least one fixed scaling factor indicates a ratio of a feature of the integrated circuit fabricated according to a first fabrication process to a feature of the integrated circuit fabricated according to a second fabrication process, wherein the fixed scaling factors are based on the fabrication processes, wherein the first fabrication process creates devices having a smaller device dimension than the second fabrication process;
- and
- wherein the at least one fixed scaling factor comprises at least a delay scaling factor based on the delay of an integrated circuit fabricated according to the first and second fabrication processes;
- wherein the at least one fixed scaling factor further comprises an area scaling factor based on the area of an integrated circuit fabricated according to the first and second fabrication processes;
- wherein the at least one settable scaling factor further comprises a voltage level scaling factor indicating a ratio of power supply voltage levels between a device fabricated according to the first and second fabrication processes and a drive current per device width scaling factor indicating a ratio of drive current per device width between a device fabricated according to the first and second fabrication processes;
- and
- wherein a relationship between the voltage level scaling factor and the at least one fixed scaling factor is expressible as:
- k
- V
- ≤
- k
- A
- 4
- ·
- k
- t
- ,
- where kV is the voltage level scaling factor, kA is the area scaling factor, and kt is the delay scaling factor.
19 more elements
A method of manufacturing an integrated circuit, the method comprising:
- determining at least one settable scaling factor for the integrated circuit to be fabricated using a first fabrication process, wherein the at least one settable scaling factor indicates an operating characteristic of a feature of the integrated circuit to be fabricated according to the first fabrication process, and wherein the at least one settable scaling factor is computed based on at least one fixed scaling factor while a power density of the integrated circuit remains substantially constant or decreasing;
- determining parameters, by using a computer, of the integrated circuit to be fabricated according to a second fabrication process and based on the at least one settable scaling factor;
- and
- manufacturing the integrated circuit using the parameters;
- and
- wherein the at least one fixed scaling factor comprises at least a delay scaling factor based on the delay of an integrated circuit fabricated according to the first and second fabrication processes;
- wherein the at least one settable scaling factor further comprises a voltage level scaling factor indicating a ratio of power supply voltage levels between a device fabricated according to the first and second fabrication processes and a drive current per device width scaling factor indicating a ratio of drive current per device width between a device fabricated according to the first and second fabrication processes;
- and
- wherein a relationship between the voltage level scaling factor, the drive current per device width scaling factor, and the fixed scaling factors are expressible as:
- k
- V
- k
- I
- ≤
- k
- t
- ,
- where kV is the voltage level scaling factor, kI is the drive current per device width scaling factor, and kt is the delay scaling factor.
15 more elements
Dependencies are inferred from the claim text.