Dynamic optimization of back-end memory system interface
AssigneeSanDisk Technologies LLC
InventorsChun Sing Jackson Chung, Steven Shisan Cheng
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AssigneeSanDisk Technologies LLC
InventorsChun Sing Jackson Chung, Steven Shisan Cheng
Estimating the term…
Techniques are presented for dynamically optimizing the performance of the controller-memory (or “back-end”) interface of a non-volatile memory system. Memory systems are usually designed to have a certain amount of error tolerance for error that can then be corrected by ECC. In may circumstances, such as when a device is new, the ECC capabilities of the system exceed what is needed to correct data storage errors. In these circumstances the memory system internally allots a non-zero portion of this error correction capacity to the back-end interface. This allows for the interface to operate at, for example, higher speed or lower power, even though this will likely lead to transmission path error. The system can also calibrate the back-end interface to determine that amount of error that result from various operating conditions, allowing the operating parameters of the back-end interface to be set according to amount of error that is allotted to the transfer process.
A method of operating a non-volatile memory system, the non-volatile memory system including a controller circuit having a memory interface, a memory circuit having an array of non-volatile memory cells and a controller interface, and a bus structure connected to the memory interface of the controller circuit and to the controller interface of the memory circuit for the transfer of data and commands therebetween, wherein the memory system can tolerate a first, non-zero amount of accumulated data error from when a unit of data is transferred from the controller to be written to the memory array until the unit of data is received at the controller after subsequently being read back from the memory array, the method comprising:
A method of operating a non-volatile memory system having a controller circuit and a memory circuit including an array of non-volatile memory cells, the method comprising:
Dependencies are inferred from the claim text.