Method of manufacturing semiconductor device, and mask
AssigneeRenesas Electronics Corporation
InventorToshihiko Tanaka
Life of this patent
Estimating the term…
Abstract
An improvement is achieved in the performance of a semiconductor device. A method of manufacturing the semiconductor device includes an exposure step of subjecting a resist film formed over a substrate to pattern exposure using EUV light reflected by the top surface of an EUV mask which is a reflection-type mask. In the exposure step, the EUV mask is held with the cleaned back surface thereof being in contact with a mask stage. In the EUV mask, the water repellency of the side surface thereof is higher than the water repellency of the top surface thereof. After the exposure step, the resist film subjected to the pattern exposure is developed to form a resist pattern.
Claims17
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) providing a mask having a top surface, a cleaned back surface opposite to the top surface, a side surface disposed between the top surface and the back surface, and an exposure pattern formed over the top surface, wherein a water repellency of the side surface of the mask is higher than a water repellency of the top surface of the mask, the back surface being cleaned by supplying a cleaning liquid to the back surface of the mask, the water repellency of the side surface repelling the cleaning liquid supplied to the back surface;
- (b) holding the mask using a holder for holding the mask with the back surface being in contact with the holder;
- (c) forming a resist film over a film to be etched formed over a main surface of a substrate;
- (d) irradiating the top surface of the mask held on the holder with exposure light to subject the resist film to pattern exposure using reflected light which is the exposure light used for the irradiation and reflected by the top surface;
- (e) developing the resist film subjected to the pattern exposure to form a resist pattern to which the exposure pattern has been transferred;
- and
- (f) using the resist pattern as an etching mask to etch the film to be etched.
A mask for performing pattern exposure using reflected light which is exposure light irradiating a top surface of the mask and reflected by the top surface, the mask comprising:
- the top surface;
- a back surface opposite to the top surface;
- a side surface disposed between the top surface and the back surface;
- and
- an exposure pattern formed over the top surface,
- wherein a water repellency of the side surface is higher than a water repellency of the top surface.
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a mask having a top surface, a back surface opposite to the top surface, a side surface disposed between the top surface and the back surface, a side surface portion formed over the side surface, an exposure pattern formed over the top surface, the exposure pattern including a reflection film formed over the top surface to reflect the exposure light, and an absorber pattern formed over the reflection film to absorb the exposure light and a conductive film formed over the back surface, wherein a water repellency of the side surface of the mask and the side surface portion is higher than a water repellency of the top surface of the mask;
- cleaning the back surface of the mask;
- holding the mask using a holder for holding the mask with the back surface being in contact with the holder, using the holder for holding the mask to electrostatically suck the conductive film while being in contact with the back surface to hold the mask;
- forming a resist film over a film to be etched formed over a main surface of a substrate;
- irradiating the top surface of the mask held on the holder with exposure light to subject the resist film to pattern exposure using reflected light which is the exposure light used for the irradiation and reflected by the top surface, the mask being held with the cleaned back surface being in contact with the holder;
- developing the resist film subjected to the pattern exposure to form a resist pattern to which the exposure pattern has been transferred;
- and
- using the resist pattern as an etching mask to etch the film to be etched.
Dependencies are inferred from the claim text.