Graphene sensor
AssigneeInternational Business Machines Corporation
InventorsDechao Guo, Shu-Jen Han, Chung-Hsun Lin, Ning Su
Life of this patent
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Abstract
A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.
Claims10
A method for forming a sensor, the method comprising:
- forming a channel in a substrate;
- forming a sacrificial layer in the channel;
- forming a gate dielectric layer on the substrate and the sacrificial layer, and a graphene layer on the gate dielectric layer;
- forming a source region on the gate dielectric layer, the source region also in contact with a first end of the graphene layer;
- forming a drain region on the gate dielectric layer, the drain region also in contact with a second end of the graphene layer;
- removing the sacrificial layer from the channel, wherein the channel comprises a physical opening formed in the substrate so as to define a gap between a bottom surface of the gate dielectric layer and a top surface of the substrate;
- and
- forming a first cavity in communication with a first end of the channel, and forming a second cavity in communication with a second end of the channel opposite the first end so as to define a fluid flow path comprising the first cavity, the channel, and the second cavity.
A method for forming a sensor, the method comprising:
- forming a plurality of channels in a substrate, each of the plurality of channels having a longitudinal axis along a first direction;
- forming a sacrificial layer in the plurality of channels;
- for each of the plurality of channels, forming a plurality of gate dielectric layers on the substrate and the sacrificial layer, each of the gate dielectric layers having a longitudinal axis along a second direction orthogonal to the first direction;
- forming a graphene layer on each gate dielectric layer;
- for each gate dielectric layer, forming a source region on the gate dielectric layer, the source region also in contact with a first end of the graphene layer, and forming drain region on the gate dielectric layer, the drain region also in contact with a second end of the graphene layer;
- forming a capping layer on the exposed substrate, graphene layer, source region and drain region;
- removing the sacrificial layer from each channel, wherein each channel comprises a physical opening formed in the substrate so as to define a gap between a bottom surface of the gate dielectric layer and a top surface of the substrate;
- and
- for each channel, forming a first cavity in the capping layer communicative with the channel, and forming a second capping layer in the channel communicative with the channel so as to define a fluid flow path comprising the first cavity, the channel, and the second cavity.
Dependencies are inferred from the claim text.