Apparatus for manufacturing single-crystal silicon carbide
AssigneeNippon Steel & Sumitomo Metal Corporation
InventorsMasashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani
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AssigneeNippon Steel & Sumitomo Metal Corporation
InventorsMasashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani
Estimating the term…
The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
An apparatus for manufacturing single-crystal silicon carbide, said apparatus comprising:
An apparatus for manufacturing single-crystal silicon carbide, said apparatus comprising:
An apparatus for manufacturing single-crystal silicon carbide, said apparatus comprising:
Dependencies are inferred from the claim text.