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US 9,068,264 B2Granted
Epitaxial growth systems
AssigneeEpistar Corporation
InventorsTzu-Ching Yang, Chung-Ying Chang
Life of this patent
Estimating the term…
Abstract
Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber, a susceptor including a supporting surface and disposed in the epitaxial growth reactor chamber, and a plurality of wafer fixing elements disposed on the supporting surface. The supporting surface of the susceptor includes a rim, and each of the wafer fixing elements includes a boundary. At least three first heating elements are disposed under the susceptor and arranged in parallel to the supporting surface.
Claims14
An epitaxial growth system, comprising:
- an epitaxial growth reactor chamber;
- a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top surface and a side surface;
- a plurality of wafer fixing elements disposed on the top surface, and each of the wafer fixing elements has a boundary;
- a plurality of first heating elements under the susceptor arranged in parallel to the top surface;
- and
- a plurality of second heating elements disposed under the outermost first heating element and no other heating elements disposed within the susceptor, wherein the first and the second heating elements are independently controllable.
3 more elements
An epitaxial growth system, comprising:
- an epitaxial growth reactor chamber;
- a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top surface and a side surface;
- a plurality of wafer fixing elements disposed on the top surface, and each of the wafer fixing elements having a boundary;
- and
- a plurality of first heating elements being apart from the top surface with a first distance;
- wherein the first distances of the first heating elements are substantially the same;
- a second heating element being apart from the top surface with a second distance less than the first distance;
- and
- a plurality of third heating elements directly under the second heating element, and no other heating elements are disposed within the susceptor, wherein the first, the second and the third heating elements are independently controllable.
6 more elements
Dependencies are inferred from the claim text.