Titanium target for sputtering
AssigneeJX Nippon Mining & Metals Corporation
InventorsShiro Tsukamoto, Nobuhito Makino, Hideaki Fukuyo
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Abstract
Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.
Claims13
A titanium target for sputtering having a Shore hardness Hs of 20 or more, a basal plane orientation ratio of 70% or less, and a 0.2% proof stress in a tensile test at room temperature (23° C.) of 330 N/mm2 or more.
A titanium target for sputtering having a Shore hardness Hs of 25 or more and a basal plane orientation ratio of 70% or less.
A titanium target for sputtering, having a Shore hardness Hs of 20 or more, a basal plane orientation ratio of 70% or less, and a 0.2% proof stress in a tensile test at 500° C. of 36 N/mm2 or more.
Dependencies are inferred from the claim text.