Cleaning composition, cleaning process, and process for producing semiconductor device
AssigneeFUJIFILM Corporation
InventorsTomonori Takahashi, Kazutaka Takahashi, Atsushi Mizutani, Hiroyuki Seki, Hideo Fushimi, Tomoo Kato
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Abstract
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
Claims17
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate, the composition comprising:
- (component a) water;
- (component b) a hydroxylamine sulfate;
- (component c) a basic organic compound;
- and
- (component d) an organic acid;
- the composition having a pH of 7.2 to 9;
- wherein component a is contained at 50 to 99.5 wt % relative to the total weight of the cleaning composition,
- component b is contained at 0.01 to 30.0 wt % relative to the total weight of the cleaning composition,
- component c is contained at 0.01 to 20.0 wt % relative to the total weight of the cleaning composition,
- component d is contained at 0.01 to 20.0 wt % relative to the total weight of the cleaning composition,
- component b is the only inorganic acid salt in the composition, and
- component d is citric acid and/or malic acid.
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate, the composition comprising:
- (component a) water;
- (component b) a hydroxylamine sulfate;
- (component c) a basic organic compound;
- and
- (component d) an organic acid;
- the composition having a pH of 7.2 to 9;
- wherein component a is contained at 50 to 99.5 wt % relative to the total weight of the cleaning composition,
- component b is contained at 0.01 to 30.0 wt % relative to the total weight of the cleaning composition;
- component c is contained at 0.01 to 20.0 wt % relative to the total weight of the cleaning composition,
- component d is citric acid and/or malic acid, and
- component b is the only inorganic acid salt in the composition.
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate, the composition comprising:
- (component a) water;
- (component b) a hydroxylamine sulfate;
- (component c) a basic organic compound;
- and
- (component d) an organic acid;
- the composition having a pH of 7.2 to 8.5;
- wherein component a is contained at 50 to 99.5 wt % relative to the total weight of the cleaning composition,
- component b is contained at 0.01 to 30.0 wt % relative to the total weight of the cleaning composition,
- component c is contained at 0.01 to 20.0 wt % relative to the total weight of the cleaning composition,
- component b is the only inorganic acid salt in the composition, and
- component d is citric acid and/or malic acid.
Dependencies are inferred from the claim text.