Polishing slurry and chemical mechanical planarization method using the same
AssigneesSK hynix Inc., Korea University Research and Business Foundation
InventorsDae Soon Lim, Dong Hee Shin, Dong Hyeon Lee, Il Ho Yang, Yang Bok Lee
Life of this patent
Estimating the term…
Abstract
A polishing slurry for a chemical mechanical planarization process includes polishing particles and polyhedral nanoscale particles having a smaller size than the polishing particles and including a bond of silicon (Si) and oxygen (O).
Claims19
A polishing slurry for planarizing a thin film containing a chalcogenide material or a chalcogenide glass material, the polishing slurry comprising:
- polishing particles;
- and
- nanoscale particles of a polyhedral oligomeric silsesquioxane (POSS) having a smaller size than the polishing particles, each of the nanoscale particles including at least one silicon (Si) atom bonded to an oxygen (O) atom,
- wherein the POSS compound includes a compound having a formula (RSiO1.5)m(R′SiO1.5)n(XSiO1.5)l,
- wherein R and R′ are organic substituents, X is a functional group, each of m, n, and l is an integer equal to or greater than 0 (zero), and
- wherein a value of m+n+1 is in a range from 6 to 12 so that the nanoscale particles are rigid and not polymerized during polishing of the thin film.
A method of chemical mechanical planarization comprising:
- providing a substrate having a surface on which a thin film including a chalcogenide material or a chalcogenide glass material is exposed so that the surface of the substrate comes in contact with a polishing pad;
- providing a polishing slurry between the polishing pad and the surface of the substrate, the polishing slurry including polishing particles and nanoscale particles of a polyhedral oligomeric silsesquioxane (POSS), the nanoscale particles having a smaller size than the polishing particles;
- and
- polishing the thin film with the polishing slurry,
- wherein the POSS compound includes a compound having a formula (RSiO1.5)m(R′SiO1.5)l,
- wherein R and R′ are organic substituents, X is a functional group, each of m, n, and l is an integer equal to or greater than 0 (zero), and
- wherein a value of m+n+1 is in a range from 6 to 12 so that the nanoscale particles are rigid and not polymerized during polishing of the thin film.
A polishing slurry for planarizing a thin film containing a chalcogenide material or a chalcogenide glass material, the polishing slurry comprising:
- nanoscale polyhedral oligomeric silsesquioxane (POSS) particles;
- and
- polishing particles that are at least about seven times larger than the nanoscale POSS particles,
- wherein the POSS compound includes a compound having a formula (RSiO1.5)m(R′SiO1.5)n(XSiO1.5)l,
- wherein R and R′ are organic substituents, X is a functional group, each of m, n, and l is an integer equal to or greater than 0 (zero), and
- wherein a value of m+n+1 is from 6 to 12.
Dependencies are inferred from the claim text.