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US 9,067,816 B2Granted
PCVD method and apparatus
AssigneeDraka Comteq B.V.
InventorsIgor Milicevic, Mattheus Jacobus Nicolaas van Stralen, Johannes Antoon Hartsuiker
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Abstract
The disclosed Plasma Chemical Vapor Deposition (PCVD) process uses the injection of plasma-reactive gas to control deposition oscillation and refractive-index oscillation (e.g., alpha oscillation). This PCVD process, which may employ a modified PCVD apparatus, achieves more uniform glass deposition. This, in turn, results in optical preforms and optical fibers having more uniform optical properties.
Claims15
A method of Plasma Chemical Vapor Deposition, comprising:
- supplying one or more glass-forming gases to a glass substrate tube;
- inducing, via microwave radiation at a wavelength λ, a plasma within the glass substrate tube to effect deposition of one or more glass layers onto the substrate tube's interior surface;
- and
- during the step of inducing a plasma to effect deposition of one or more glass layers, supplying plasma-reactive gas to the substrate tube in one or more pulses as a function of the plasma's axial position along the substrate tube's length to control deposition oscillation and/or refractive-index oscillation, wherein the one or more pulses correspond to longitudinal positions along the substrate tube's length equaling one half or an uneven multiple of one half of the microwave-radiation wavelength λ.
1 more element
Dependencies are inferred from the claim text.