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US 9,067,796 B2Granted
Method of graphene manufacturing
AssigneeInstytut Technologii Materialow Elektronicznych
InventorWlodzimierz Strupinski
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Abstract
A method for manufacturing graphene by vapor phase epitaxy on a substrate comprising a surface of SiC, characterized in that the process of sublimation of silicon from the substrate is controlled by a flow of an inert gas or a gas other than an inert gas through the epitaxial reactor. Graphene obtained by this method.
Claims20
A method of manufacturing graphene in an epitaxial reactor, comprising
- providing a substrate of SiC in the epitaxial reactor,
- introducing gaseous carbon precursor into the epitaxial reactor as an external carbon source,
- maintaining the SiC substrate at a temperature of above 1100° C. and
- depositing carbon on the SiC substrate by vapor phase epitaxial deposition,
- inhibiting or preventing sublimation of silicon from the SiC substrate by a flow of an inert gas or a gas other than an inert gas through the epitaxial reactor,
- wherein during said vapor phase epitaxial deposition the product of the inert gas or the gas other than the inert gas in the reactor and the inert gas or the gas other than the inert gas flow rate through the reactor is adjusted such that a stagnant layer of the inert gas or the gas other than the inert gas is created over the surface of said substrate, preventing silicon sublimation.
3 more elements
Dependencies are inferred from the claim text.