Dry etching method
AssigneeCanon Kabushiki Kaisha
InventorsHiroyuki Abo, Toshiyasu Sakai, Kazuya Abe
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Abstract
According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.
Claims17
A dry etching method comprising patterning a resin film provided on a substrate, by reactive ion etching using a resist mask,
- wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0% to 1.25% is used as an etching gas,
- wherein a pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more,
- wherein the reactive ion etching includes a first stage in which 5% to 95% of a thickness of the resin film is removed beginning with a start of etching, and a second stage in which etching is performed after the first stage,
- wherein high-frequency antenna power in the second stage is higher than high-frequency antenna power in the first stage, and
- wherein high-frequency bias power in the first stage is 450 W to 1050 W and high-frequency bias power in the second stage is 30 W to 70 W.
A method for manufacturing a liquid discharge head which includes a substrate having a discharge energy generating element on a side of a first surface, and a coating resin layer provided on the first surface of the substrate, where the discharge energy generating element is adapted to generate energy used to discharge a liquid and the coating resin layer makes up at least a liquid flow path through which the liquid flows, the method comprising:
- (1) patterning an adhesion improvement film provided on the first surface of the substrate, by reactive ion etching;
- (2) forming the coating resin layer on the adhesion improvement film subjected to the patterning,
- wherein the reactive ion etching is carried out using a resist mask,
- wherein a gas mixture containing CF4 gas with a percentage flow rate of 1.0% to 1.25% is used as an etching gas, and
- wherein a pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.
Dependencies are inferred from the claim text.