Power semiconductor module and method of manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsOsamu Usui, Naoki Yoshimatsu, Masao Kikuchi
Life of this patent
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Abstract
First chip main surfaces of first semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the first semiconductor chips are bonded to a first electrode. First chip main surfaces of second semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the second semiconductor chips are bonded to a first electrode. A plurality of electrodes are provided by a lead frame. An insulating member is provided on a side opposite to the chips when viewed from the heat spreader. An insulating substrate is provided on a side opposite to the chips when viewed from the first electrodes.
Claims11
A power semiconductor module of resin-sealed type, comprising:
- a plurality of unit structures, each said unit structure including a plurality of semiconductor chips each having a first chip main surface and a second chip main surface, and a heat spreader having conductivity, to which said first chip main surfaces of said plurality of semiconductor chips are bonded with a first bonding member;
- an insulating member located on a side opposite to said plurality of semiconductor chips when viewed from said heat spreader;
- a plurality of electrodes including a plurality of main electrodes, each said main electrode bonded to a predetermined portion with a second bonding member, said plurality of main electrodes including a plurality of first electrodes bonded to said second chip main surfaces of predetermined chips among said plurality of semiconductor chips with said second bonding member, and a second electrode that is bonded to a chip-mounting surface of said heat spreader with said second bonding member and that projects out of said molding resin to have said external terminal portion;
- an insulating substrate including an insulating layer located on a side opposite to said plurality of semiconductor chips when viewed from said plurality of first electrodes, and a first conductive layer located between said insulating layer and said plurality of first electrodes and bonded to said plurality of first electrodes with a third bonding member;
- and
- a molding resin sealing said plurality of unit structures and said plurality of electrodes in a state in which a surface of said insulating member on a side far from said plurality of semiconductor chips, a surface of said insulating substrate on the side far from said plurality of semiconductor chips, and external terminal portions of said plurality of electrodes are exposed,
- wherein
- said plurality of electrodes, including said plurality of main electrodes, are provided by a lead frame in which said plurality of electrodes are formed in advance,
- said plurality of first electrodes include a series-connection-type first electrode bonded to said second chip main surface of one unit structure and bonded to said chip-mounting surface of said heat spreader of the other one or more unit structures, and
- said series-connection-type first electrode is provided by a single member cut out from said lead frame.
Dependencies are inferred from the claim text.