# US 9,054,671 B2 · Tunable filter structures and design structures

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- Number: US 9,054,671 B2
- Document ID: US9054671B2
- Status: Granted
- Kind: B2
- Application number: 13/292,729
- Filed: 2011-11-09
- Published: 2013-05-09
- Granted: 2015-06-09
- Earliest claimed: 2011-11-09
- Assignees: International Business Machines Corporation
- Applicants: James W. Adkisson; Panglijen Candra; Thomas J. Dunbar; Mark D. Jaffe; Robert K. Leidy; Anthony K. Stamper
- Inventors: James W. Adkisson; Panglijen Candra; Thomas J. Dunbar; Mark D. Jaffe; Robert K. Leidy; Anthony K. Stamper
- Web page: https://patentgrep.com/patent/US9054671B2

## CPC

- H03H 9/545: {including active elements}
- H03H 9/0547: {consisting of a vertical arrangement (H03H9/0566 takes precedence)}
- H03H 9/171: {implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type}
- H03H 9/173: {Air-gaps}
- H03H 9/56: Monolithic crystal filters
- H03H 2009/02204: {operating on an additional circuit element, e.g. applying a tuning DC voltage to a passive circuit element connected to the resonator}
- Y10T 29/42: Piezoelectric device making
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

## Claims

### Claim 1

A method of forming a filter structure, comprising:
forming a piezoelectric resonance filter over a cavity structure, wherein the forming comprises:
forming an upper electrode on one side of a piezoelectric material; and
forming a lower electrode on an opposing side of the piezoelectric material;
forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter; and
forming an electrode in an insulator material, below the cavity and structured to apply an effective load to the MEMS cantilever beam.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming of the MEMS cantilever beam comprises forming a comb structure over the piezoelectric resonance filter.

### Claim 3 (depends on 2)

The method of claim 2, wherein forming of the comb structure comprises forming a high resistive region on a plurality of fingers of the comb structure.

### Claim 4 (depends on 2)

The method of claim 2, wherein a plurality of fingers of the comb structure are locked in contact with the piezoelectric resonance filter through stiction.

### Claim 5 (depends on 1)

The method of claim 1, further comprising forming a loading bar on the upper electrode of the piezoelectric resonance filter, wherein the MEMS cantilever beam is formed at a location in which, upon actuation, makes contact with the loading bar.

### Claim 6 (depends on 5)

The method of claim 5, wherein:
the loading bar is formed by depositing a metal or metal alloy on the upper electrode; and
the loading bar acts as an electrode to pull down the MEMS cantilever beam into contact with the piezoelectric resonance filter.

### Claim 7 (depends on 5)

The method of claim 5, wherein:
the loading bar is formed by depositing a dielectric material on the upper electrode; and
the upper electrode acts as an electrode to pull down the MEMS cantilever beam into contact with the piezoelectric resonance filter.

### Claim 8

A method of forming a filter structure, comprising:
forming a piezoelectric resonance filter over a cavity structure, wherein the forming comprises:
forming an upper electrode on one side of a piezoelectric material; and
forming a lower electrode on an opposing side of the piezoelectric material; and
forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter,
wherein forming of the MEMS cantilever beam comprises forming a comb structure over the piezoelectric resonance filter,
wherein forming of the comb structure comprises forming a high resistive region on a plurality of fingers of the comb structure, and
wherein the high resistive region is formed of a different material than remaining portions of the comb structure.

### Claim 9

A method of forming a filter structure, comprising:
forming a piezoelectric resonance filter over a cavity structure, wherein the forming comprises:
forming an upper electrode on one side of a piezoelectric material; and
forming a lower electrode on an opposing side of the piezoelectric material; and
forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter, wherein
forming of the MEMS cantilever beam comprises forming a comb structure over the piezoelectric resonance filter, and
forming of the comb structure comprises at least one of forming fingers of different materials and fingers of different lengths.

### Claim 10

A filter structure, comprising:
a piezoelectric resonance filter formed over a cavity structure, wherein the piezoelectric resonance filter comprises:
an upper electrode on one side of a piezoelectric material; and
a lower electrode on an opposing side of the piezoelectric material;
a micro-electro-mechanical structure (MEMS) cantilever beam fixed on one end to an insulator material and suspended over the piezoelectric resonance filter at a location in which, upon actuation, makes contact with the piezoelectric resonance filter, wherein
the MEMS cantilever beam comprises a comb structure,
the comb structure comprises a high resistive region on a plurality of fingers of the comb structure, and
the high resistive region is formed of a different material than remaining portions of the comb structure.

### Claim 11

A filter structure, comprising:
a piezoelectric resonance filter formed over a cavity structure, wherein the piezoelectric resonance filter comprises:
an upper electrode on one side of a piezoelectric material; and
a lower electrode on an opposing side of the piezoelectric material;
a micro-electro-mechanical structure (MEMS) cantilever beam fixed on one end to an insulator material and suspended over the piezoelectric resonance filter at a location in which, upon actuation, makes contact with the piezoelectric resonance filter;
the MEMS cantilever beam comprises a comb structure, and
an electrode in an insulator material, below the cavity and structured to apply an effective load to the MEMS cantilever beam.

### Claim 12 (depends on 11)

The filter structure of claim 11, wherein the comb structure comprises a high resistive region on a plurality of fingers of the comb structure.

### Claim 13 (depends on 11)

The filter structure of claim 11, wherein a plurality of fingers of the comb structure are locked in contact with the piezoelectric resonance filter through stiction.

### Claim 14 (depends on 11)

The filter structure of claim 11, further comprising a loading bar on the upper electrode of the piezoelectric resonance filter,
wherein the MEMS cantilever beam is at a location in which, upon actuation, makes contact with the loading bar, and
wherein one of:
the loading bar is a dielectric material and the upper electrode is structured to act as an electrode to pull down the MEMS cantilever beam into contact with the loading bar; and
the loading bar is a metal or metal alloy, and is structured to act as an electrode to pull down the MEMS cantilever beam into contact with the loading bar.

### Claim 15

A filter structure, comprising:
a piezoelectric resonance filter formed over a cavity structure, wherein the piezoelectric resonance filter comprises:
an upper electrode on one side of a piezoelectric material; and
a lower electrode on an opposing side of the piezoelectric material; and
a micro-electro-mechanical structure (MEMS) cantilever beam fixed on one end to an insulator material and suspended over the piezoelectric resonance filter at a location in which, upon actuation, makes contact with the piezoelectric resonance filter,
wherein the MEMS cantilever beam comprises a comb structure and the comb structure includes fingers of different lengths.

### Claim 16

A filter structure, comprising:
a piezoelectric resonance filter formed over a cavity structure, wherein the piezoelectric resonance filter comprises:
an upper electrode on one side of a piezoelectric material; and
a lower electrode on an opposing side of the piezoelectric material; and
a micro-electro-mechanical structure (MEMS) cantilever beam fixed on one end to an insulator material and suspended over the piezoelectric resonance filter at a location in which, upon actuation, makes contact with the piezoelectric resonance filter,
wherein the MEMS cantilever beam comprises a comb structure and the comb structure includes fingers of different materials.
