Back to results
US 9,053,907 B2Granted
System and method of ion neutralization with multiple-zoned plasma flood gun
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Lin Chang, Chih-Hong Hwang, Wen-Yu Ku, Chi-Ming Yang, Chin-Hsiang Lin
Life of this patent
Estimating the term…
Abstract
An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.
Claims18
An apparatus comprising:
- a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam, the plasma flood gun comprising more than two arc chambers, wherein each arc chamber is configured to generate and release electrons directly into the ion beam in a respective zone adjacent to the semiconductor wafer.
An ion implantation equipment system, comprising:
- an ion beam source;
- and
- a plasma flood gun apparatus for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam, which comprises:
- more than two arc chambers, wherein each arc chamber is configured to generate and release secondary electrons directly into the ion beam in a respective zone adjacent to the semiconductor wafer.
1 more element
An ion implantation method, comprising the steps of
- generating an ion beam and directing the ion beam toward a semiconductor wafer;
- generating secondary electrons from more than two arc chambers in a plasma flood gun apparatus;
- and
- releasing the secondary electrons directly from each arc chamber into the ion beam in a respective zone adjacent to the semiconductor wafer.
1 more element
Dependencies are inferred from the claim text.