Melt stabilization and vapor-phase synthesis of cesium germanium halides
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsSteven R. Bowman, Nicholas J. Condon, Shawn P. O'Connor
Life of this patent
Estimating the term…
Abstract
The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.
Claims12
A method of vapor-phase synthesis of a cesium germanium halide, comprising:
- utilizing germanium dihalides as cover gases in a first vessel;
- reacting Ge metal with GeX4 vapor and producing germanium dihalide vapor in situ in the first vessel;
- transporting the germanium dihalide vapor to a second vessel;
- reacting the germanium dihalide vapor with CsX in the second vessel;
- and
- producing CsGeX3 in the second vessel.
A method of vapor-phase synthesis of a cesium germanium halide comprising:
- loading a charge of CsX into a first tube;
- loading a charge of Ge(0) into a second tube;
- loading the first tube and the second tube into a first vessel;
- capping the vessel with a plug and thereby sealing;
- fitting a transfer tube into the plug;
- placing the first vessel with the first tube and the second tube into a furnace;
- evacuating and removing the room air and any water;
- injecting GeCl4 into the first vessel;
- boiling the GeCl4;
- filling the vessel to its vapor pressure;
- increasing the temperature of the furnace to about 360 degrees C.;
- reacting the GeCl4 with the Ge(0) and generating GeCl2 gas in the first vessel;
- transporting the GeCl2 gas to a second vessel;
- and
- reacting the GeCl2 gas with CsX and producing CsGeX3.
A method of vapor-phase synthesis of a cesium germanium halide comprising:
- loading a charge of CsCl beads into a first tube with an opening;
- placing a third tube near the opening for collecting the product;
- loading a charge of Ge(0) into a second tube;
- loading the first tube and the second tube into a first vessel;
- capping the first vessel with a plug and thereby sealing;
- placing the first vessel with the first tube and the second tube into a furnace;
- evacuating and removing the room air and any water;
- injecting GeCl4 into the first vessel;
- boiling the GeCl4;
- filling the first vessel to its vapor pressure;
- increasing the temperature of the furnace to about 360 degrees C.;
- reacting the GeCl4 with the Ge(0) and generating GeCl2 gas;
- transporting the GeCl2 gas to a second vessel;
- reacting the GeCl2 gas with CsCl beads;
- and
- producing CsGeX3 in the second vessel.
Dependencies are inferred from the claim text.