Treatment method of a getter material and encapsulation method of such getter material
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsXavier Baillin, Emmanuelle Lagoutte, Guillaume Rodriguez
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Abstract
A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm.
Claims14
A treatment method for a thin layer getter material, comprising:
- forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen,
- wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material,
- wherein the protective layer is substantially planar,
- wherein a thickness of the protective layer is between approximately 1 nm and 10 nm, and
- wherein the protective layer and the thin layer getter material are disposed in a cavity, the cavity being sealed such that at least a portion of the cavity remains.
An encapsulation method of a thin layer getter material in a cavity, comprising:
- depositing the thin layer getter material on at least one face of a layer intended to form a wall of the cavity;
- forming a protective layer on the thin layer getter material by conducting a treatment method of the thin layer getter material, comprising:
- performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen,
- wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material,
- wherein the protective layer is substantially planar, and
- wherein a thickness of the protective layer is between approximately 1 nm and 10 nm;
- and
- sealing of the cavity containing the thin layer getter material, such that at least a portion of the cavity remains after the sealing.
Dependencies are inferred from the claim text.