# US 9,049,806 B2 · Integrated device and manufacturing method

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- Number: US 9,049,806 B2
- Document ID: US9049806B2
- Status: Granted
- Kind: B2
- Application number: 12/949,488
- Filed: 2010-11-18
- Published: 2011-05-26
- Granted: 2015-06-02
- Earliest claimed: 2009-11-20
- Assignees: Citizen Holdings Co., Ltd.
- Applicants: Masafumi Ide; Toru Takizawa; Kaoru Yoda
- Inventors: Masafumi Ide; Toru Takizawa; Kaoru Yoda
- Web page: https://patentgrep.com/patent/US9049806B2

## CPC

- H05K 3/32: electrically connecting electric components or wires to printed circuits
- G02B 6/12007: {forming wavelength selective elements, e.g. multiplexer, demultiplexer}
- G02B 6/4215: {the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers (G02B6/4246 takes precedence)}
- G02B 6/4232: {using the surface tension of fluid solder to align the elements, e.g. solder bump techniques (flip-chip mounting techniques in assembly of semiconductor devices H10W72/072)}
- H05K 1/111: {Pads for surface mounting, e.g. lay-out}
- H10W 72/073: {of die-attach connectors}
- G02F 1/3505: {Coatings; Housings; Supports}
- H01S 5/02325: Mechanically integrated components on mount members or optical micro-benches
- H01S 5/02345: Wire-bonding
- H01S 5/0237: by soldering
- H05K 1/0274: {Optical details, e.g. printed circuits comprising integral optical means (H05K1/0269 takes precedence; coupling light guides with opto-electronic components G02B6/42)}
- H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass}
- H05K 2201/0373: Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool
- H05K 2201/09745: Recess in conductor, e.g. in pad or in metallic substrate
- H05K 2201/10121: Optical component, e.g. opto-electronic component
- H05K 2201/10674: Flip chip
- H05K 2203/0369: Etching selective parts of a metal substrate through part of its thickness, e.g. using etch resist
- H05K 2203/095: Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

An integrated device includes an optical element and an electrical element that are implemented on a substrate. The optical element and the electrical element are bonded by surface-activated bonding technology to a bonding portion that is formed on the substrate and made of metal material.

## Claims

### Claim 1

An integrated device in which an optical element and an electrical element are implemented on a substrate and a plurality of laser diodes, a plurality of wavelength multiplexers, and a plurality of 90° pitch converters are arranged on the substrate, wherein
materials of the optical element and the electrical element have different coefficients of thermal expansion from each other,
the optical element and the electrical element are bonded by surface-activated bonding technology to a bonding portion that is formed on the substrate and made of metal material, a bonding state of the bonding portion bonded by the surface-activated bonding technology is reinforced by resin,
a waveguide is formed on the substrate and connected to the optical element directly,
an interval between the plurality of wavelength multiplexers is small compared to an interval among the plurality of laser diodes, and
the plurality of 90° pitch converters are provided at corners, formed by inputs to the plurality of wavelength multiplexers and waveguides for connecting the plurality of laser diodes, to align a pitch of the waveguides on a side of the plurality of laser diodes with that on a side of plurality of wavelength multiplexers.

### Claim 2 (depends on 1)

The integrated device according to claim 1, wherein the bonding portion has a microbump structure.

### Claim 3 (depends on 1)

The integrated device according to claim 1, wherein the metal material is Au.

### Claim 4 (depends on 1)

The integrated device according to claim 1, wherein a laser element is bonded to the bonding portion as the optical element.

### Claim 5 (depends on 1)

The integrated device according to claim 1, wherein a wavelength conversion element is bonded to the bonding portion as the optical element.

### Claim 6 (depends on 1)

The integrated device according to claim 1, wherein a light receiving element is bonded to the bonding portion as the optical element.

### Claim 7 (depends on 1)

The integrated device according to claim 1, wherein the substrate is a silicon substrate.

### Claim 8 (depends on 7)

The integrated device according to claim 7, wherein the silicon substrate includes an integrated circuit.